
SS8550 PNP Transistor - SOT-23 SMD Package (Pack of 10)
SKU: TT-BCE1CFCE6588
Includes 18% GST
The SS8550 PNP Transistor - SOT-23 SMD Package is a high-gain, general-purpose transistor designed for medium current and low-voltage switching applications. With low saturation voltage and high current handling capacity, it ensures efficient performance in compact PCB layouts. Ideal for audio amplification, driver st…
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Courier from ₹79.00 per order · Free above ₹999.00
Product description
The SS8550 PNP Transistor - SOT-23 SMD Package is a high-gain, general-purpose transistor designed for medium current and low-voltage switching applications. With low saturation voltage and high current handling capacity, it ensures efficient performance in compact PCB layouts. Ideal for audio amplification, driver stages, and complementary use with NPN SS8050 transistors.
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Features:
- High collector current capability up to -1.5A
- Low collector-emitter saturation voltage for efficient switching
- High DC current gain ensuring stable amplification
- Complementary to SS8050 NPN transistor
- Compact SOT-23 surface-mount design for space-saving applications
Specifications:
- Collector-Base Voltage (VCBO): -40V
- Collector-Emitter Voltage (VCEO): -25V
- Emitter-Base Voltage (VEBO): -5V
- Collector Current (IC): -1.5A
- Collector Power Dissipation (PCM) at 25°C: 0.3W
- Junction Temperature (TJ): -55°C to +150°C
- Storage Temperature (TSTG): -55°C to +150°C
- Collector-Base Breakdown Voltage (V(BR)CBO): -40V
- Collector-Emitter Breakdown Voltage (V(BR)CEO): -25V
- Emitter-Base Breakdown Voltage (V(BR)EBO): -5V
- Collector Cutoff Current (ICBO): -0.1µA
- Collector Cutoff Current (ICEO): -0.1µA
- Emitter Cutoff Current (IEBO): -0.1µA
- DC Current Gain (hFE1) at -100mA: 120 to 350
- DC Current Gain (hFE2) at -800mA: Min 40
- Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V
- Base-Emitter Saturation Voltage (VBE(sat)): -1.2V
- Transition Frequency (fT): 100MHz
Package Includes:
10 × SS8550 PNP Transistor - SOT-23 SMD Package
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